Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.14: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

Crystallographically Anisotropic Etching of Graphene — •Florian Oberhuber, Dieter Weiss, and Jonathan Eroms — Institute for Experimental and Applied Physics, University of Regensburg

We report crystallographically anisotropic carbothermal etching of graphene on SiO₂ substrates in an argon gas flow at atmospheric pressure. The samples were prepatterned with antidot lattices by electron beam lithography and reactive ion etching. The hexagonal form of the antidots obtained by the carbothermal reaction suggests the absence of armchair edges [1]. We studied the dependence of the etching rate on the number of graphene layers.

Furthermore we conducted electron transport measurements on a set of single- and bilayer samples patterned by lattices of hexagonal antidots. From temperature dependent investigation of the clearly resolved weak localization peak we deduce the phase coherence length as well as lengths for inter- and intravalley scattering.

[1] P. Nemes-Incze et al., Nano Res. 3, 110 (2010)