DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2011 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.15: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

Fabrication of top gates with ALD deposited Al2O3 on graphene structures — •Franz-Xaver Schrettenbrunner, Dieter Weiss, and Jonathan Eroms — Institut für Experimentelle und Angewandte Physik, Universtität Regensburg, 93040 Regensburg

We report the fabrication and transport measurements of top gated graphene devices. The insulating Al2O3 top gate was realized using atomic layer deposition. Usually, a seed layer (e.g. oxidized aluminum, NO2/TMA process, etc.) has to be grown in order to achieve uniform oxide layers with low impurities. Previously, we have shown that a 100C TMA/H2O-process with low purge times of five seconds creates a stable top gate dielectric on graphene resulting in strong n-doping of the sample (impurity carrier density: nind=5.2·1012cm−2). Now this process was improved by growing 10nm Al2O3 at 100C as a seed layer on which further material was deposited while heating the ALD reaction chamber up to 225C. This "in-situ" annealing step forms a stable gate dielectric on our graphene structures with impurity carrier density nind=3.6·1011cm−2.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2011 > Dresden