Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.20: Poster
Tuesday, March 15, 2011, 18:00–21:00, P3
Investigation of the direct bandgap-emission of highly doped strained germanium layers — •Michael J. Drexler1, Niko S. Köster1, Kolja Kolata1, Giovanni Isella2, Daniel Chrastina2, Hans von Känel2, Hans Sigg3, and Sangam Chatterjee1 — 1Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2Dipartimento di Fisica del Politecnico di Milano, Polo di Como, via Anzani 42, I-22100 Como, Italy — 3Labor für Micro- und Nanotechnologie, Paul Scherrer Institut, Schweiz
One of the key components of Si photonics is an all integrated laser light source emitting in the C-band at 1550 nm. A promising approach is using highly doped tensile strained germanium. Optical gain in this material system has been shown [1]. We processed structures with several cavity lengths to investigate the edge- emitted light from the direct band-gap transitions. The system is pumped with a Q-switched laser at 1054nm with 70 ns pulses and the emitted light is spectrally resolved with a double monochromator and detected with a liquid nitrogen cooled Ge-detector.
[1] J. Liu et al, Opt. Lett. 34 (11), p. 1738-40, 2009