Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.2: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Electric field induced transition phenomena in phase change materials — •Martin Wimmer, Gunnar Bruns, Philipp Merkelbach, Carl Schlockermann, Martin Salinga, and Matthias Wuttig — I. Physikalisches Institut (IA), RWTH Aachen University

Phase change materials have already been successfully applied in rewriteable optical media like DVD-RW and Blu-ray RW. Prototypes of electrical storage devices based on phase change memories provide key features like non-volatility and ultrafast read and write speeds. The information is stored by the distinct difference of optical or electrical properties between the amorphous and crystalline structure.

The electrical switching behaviour of GeSbTe-based phase change memory devices needs to be investigated. The phenomenon of threshold-switching, a sudden drop in resistivity in the picosecond timescale at high electric fields, is important for applications, in particular if high data transfer rates are required. To investigate very fast switching events, a high frequency optimised setup for electrical testing has been established. Time resolved measurements on the picosecond timescale during the switching process are performed, which provide detailed knowledge of the electronic switching mechanism.