Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.36: Poster
Dienstag, 15. März 2011, 18:00–21:00, P3
Fabrication of a μ-Schottky diode using molecular beam epitaxy and ion beam lithography — •Ashish K. Rai1, P. Szary2, O. Petracic2, H. Zabel2, H.-W. Becker3, A. Ludwig1, D. Mantei4, S. Gordon4, A. Zrenner4, D. Reuter1, and A. D. Wieck1 — 1Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany — 2Experimentalphysik IV, Ruhr-Universität Bochum, D-44780 Bochum, Germany — 3Fakultät für Physik und Astronomie, Ruhr-Universität Bochum, 44780 Bochum, Germany — 4Center for Optoelectronics and Photonics Paderborn,Uni. Paderborn, 100 33098 Paderborn, Germany
Schottky junctions of the metal-intrinsic-n-doped type are widely used to control the charge in quantum dots (QDs) underneath them by an electrical field.It is significant technological challenge to apply this concept to single QDs and requires μ-Schottky diodes with an active area of approximately 1μm x μm.In this contribution,we present a novel approach to create such μ-diodes:After growing the basic layer sequence by molecular beam epitaxy,we define a buried stripe in the n-layer by optical lithography and subsequent O ion implantation in opened stripe-like resist window.After that,a metal line oriented perpendicular to the buried stripe is defined on the surface by electron beam lithography,so that the active area of the junction is only the over-lap region of both stripes.The diode characteristic was confirmed by I-V measurements at room temperature as well as at low temperature (4.2K).It is intended to perform PLV (voltage dependent Photoluminescence of single QDs)or Electroluminescence on these structures.