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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.39: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

Carbon implantation in GaAs by focused ion beam and electrical activation by rapid thermal annealing — •Markus K. Greff, Arne Ludwig, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

Since its development at the end of the 70s, focused ion beam implantation has become a powerful tool for maskless, local implantation or sputtering with a lateral resolution about 10 nm. Because carbon is one of the shallowest acceptors in GaAs, it is desirable to create a focused carbon beam employing a suitable liquid metal ion source[1].
Also one could think about possible applications such as implantation of carbon in diamond or organic materials as well as working with carbon nanotubes or graphene.
In this contribution we would like to present first results for carbon implantation in GaAs by focused ion beam and subsequent electrical activation of implanted carbon by rapid thermal annealing.

P. Mazarov, A.D. Wieck, L. Bischoff, and W. Pilz, Journal of Vacuum Science and Technology B 27, L47 - L49 (2009).