Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.3: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

Drift in amorphous phase change materials — •Rüdiger M. Schmidt, Gunnar Bruns, Jennifer Luckas, Carl Schlockermann, Martin Salinga, and Matthias Wuttig — I. Physikalisches Institut (IA), RWTH Aachen University

While phase change materials have been successfully applied in rewriteable data storage, they are also used for novel non-volatile electronic data storage devices. The material has the ability to be switched within nanoseconds between the two phases, which show a large optical and electrical contrast. The low resistive crystalline phase is associated with a logic zero state and the high resistive amorphous phase with a logic one state.

While the resistance of the crystalline phase does not change over time, the amorphous phase shows a resistance drift with time and temperature. This drift needs to be understood, especially in order to increase the storage density by employing multi level storage. To gain a deeper insight into the temperature and time dependant drift phenomena, a custom made setup was designed. The setup can perform measurements of sheet resistances up to 100 GΩ in a temperature range from 300 K to 625 K and has a temperature stability of 0.01 K. Our results show that drift is correlated to the activation energy and the number of bond-bending and bond-stretching constraints.