Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.41: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

MOVPE grown InAs quantum dots: Towards long wavelength emission — •Matthias Paul, Daniel Richter, Elisabeth Koroknay, Wolfgang-Michael Schulz, Marcus Eichfelder, Robert Roßbach, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, University Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

In recent years, investigations on semiconductor quantum dots (QDs) have been motivated by their potential application in the field of quantum information processing. Therefore, optically or electrically addressable single quantum dots are needed on a mass production scale using metal-organic vapor-phase epitaxy (MOVPE). QD emission in the telecom wavelength bands around 1.3 µm and 1.55µm reduces optical losses in fibers to a minimum. Furthermore, low densities of QDs will allow for single-photon sources, one key device in quantum information networks. Two approaches are pursued to reach emission wavelengths of 1.3µm and 1.55µm, respectively. First, embedding InAs QDs in an InGaAs well grown on GaAs substrates the InAs QD emission is shifted to long wavelengths. Second, even longer wavelengths can be reached by growing InAs QDs on InP substrates. The influence of the growth conditions on the QD properties is investigated and optimized to achieve long wavelength emission. The optical QD properties are analyzed by photoluminescence (PL). Furthermore, the structural properties are examined.