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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.57: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Time-resolved photoluminescence spectroscopy on ZnO based films grown by molecular beam epitaxy — •Manuel H. W. Bader, Marcel Ruth, Christina A. Fobbe, and Cedrik Meier — University of Paderborn, Experimental Physics & CeOPP, Warburger Str. 100, 33098 Paderborn

Due to its unique properties such as the large direct bandgap of 3.37 eV and its high exciton binding energy of 60 meV, zinc oxide (ZnO) is a very promising semiconductor for optoelectronic and photonic applications even at room temperature. By adding cadmium (Cd) or magnesium (Mg) the bandgap can be tuned between 2.5 eV and 4.3 eV.

Especially quantum wells and multi-quantum wells can serve as light emitting sources inside photonic devices. Therefore, thin ZnO and (Zn,Mg)O films have been grown in a plasma assisted molecular beam epitaxy system using silicon (111), sapphire (0001) and ZnO (0001) substrates. Growth conditions were systematically studied using in-situ reflection high energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM), x-ray diffraction (XRD) and photoluminescence (PL).

Recombination dynamics and binding energies are studied using time resolved photoluminescence spectroscopy in the temperature range between T=7 K and 300 K.