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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.61: Poster
Tuesday, March 15, 2011, 18:00–21:00, P3
Back-illuminated visible-blind and wavelength selective metal-semiconductor-metal photodetectors based on MgZnO-heterostructures — •Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Michael Lorenz, Holger Hochmuth, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstraße 5, 04103, Leipzig
We report on the utilization of Mgx1Zn1−x1O/Mgx2Zn1−x2O heterostructure having two different Mg-content (x1<x2) enabling the construction of wavelength-selective backside-illuminated photodetectors. For that, the Mgx2Zn1−x2O-layer is heteroepitaxially grown by pulsed-laser deposition on a both-side polished a-plane sapphire substrate, and acts as an integrated optical passive filter blocking high energy radiation. Subsequently the Mgx1Zn1−x1O-layer, being the active layer of the devices is deposited. The width of bandpass of the devices is given by the bandgap difference of the two MgZnO-layers, and the center of bandpass can be shifted by using different combination of x1 and x2. The Schottky contacts of the interdigital metal-semiconductor-metal (MSM) structure were fabricated by reactive dc-sputtering of Pd and Pt with Pd- and Pt-capping [1], respectively.
[1]: H. v. Wenckstern et al., Mater. Rec. Soc. Symp. Proc., 1201, H04-02 (2010)