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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.65: Poster
Tuesday, March 15, 2011, 18:00–21:00, P3
Preparation of donor doped ZnOxS1−x thin films — •Achim Kronenberger, Philipp Schurig, Andreas Laufer, Hauke Metelmann, Jan E. Stehr, Jan Philipps, Benedikt Kramm, Angelika Polity, Detlev M. Hofmann, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
It is well known that ZnO can easily be doped n-type which is commonly realized by incorporating group-III elements on a Zn lattice place. In contrast to that there are rather few publications reporting successful n-type doping of ZnS. The ternary material system ZnOxS1−x can be prepared without any miscibility gap by radio frequency sputtering. This offers the possibility to study the electrical activity of the shallow donor dopants over the complete composition range. In our work ZnOxS1−x thin films were deposited from a ceramic ZnS target by radio frequency sputtering on glass, sapphire and semiconductor substrates. Through reactive sputtering with oxygen gas the film composition can be adjusted to the wanted oxygen/sulphur ratio. As dopants Al, F and H were incorporated by using additional target material or reactive gas, respectively.