Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.66: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

An EPR investigation of the nitrogen center in ZnO — •Jan E. Stehr, Detlev M. Hofmann, and Bruno K. Meyer — 1st Physics Institute, Justus-Liebig-University Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

ZnO with the direct band gap of 3.36 eV at room-temperature is a promising material for UV light emitting devices. Therefore it is necessary to have n-type conducting ZnO as well as p-type conducting ZnO. Since ZnO is an intrinsic n-type material, p-type conductivity is the major challenge. In the last years it turned out that nitrogen is the most promising candidate.

We investigated an electron irradiated Eagle Picher ZnO bulk crystal with the method of Electron Paramagnetic Resonance (EPR). After illumination with light the well known 3-line EPR spectrum of nitrogen with I=1 in ZnO shows up [1]. We tracked the angular dependency of the 3 lines and the 6 *forbidden* EPR transitions of nitrogen. Photon-irradiation with energies higher than 2.2 eV leads to the creation of the EPR-signal and with energies of 0.7 eV it was also possible to quench it. Also the time-dependency of the EPR-signal was measured to get information on its creation- and the decay-behavior.

[1] N. Y. Garces et al., Appl. Phys. Lett. 80, 1334 (2002)