Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.68: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Influence of nitrogen on optical properties of zinc oxide using Raman spectroscopy — •Christian Reindl, Julian Benz, Thomas Sander, Stefan Lautenschläger, Sebastian Eisermann, Peter J. Klar, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Gießen

The wide bandgap semiconductor zinc oxide (ZnO) is an interesting material for the production of blue and UV optoelectronic devices. P-type doping remains an obstacle for fabricating devices completely based on ZnO. Since nitrogen is a promising candidate for p-type doping ZnO, thin ZnO:N layers produced by low temperature CVD using ammonia as precursor for nitrogen were investigated. We studied the influence of nitrogen on the optical properties of ZnO by Raman spectroscopy. Numerous modes related to nitrogen were found in the Raman spectra. We investigated angle dependence and the scaling of these modes with the N-concentration using green and red lasers.