Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.71: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

Statistical analysis of contact resistance between P3HT and several electrode materials on flexible substrates — •Arne Hendel, Miriam Hehn, and Veit Wagner — Jacobs University Bremen, School of Engineering and Science, Campus Ring 1, 28759 Bremen, Germany

Finite contact resistance in organic field-effect transistors is one of the major obstacles towards higher switching frequencies. In this work optimal contact materials / treatments for the organic semiconductor poly(3-hexylthiophen) (P3HT) are identified. Considered candidates are sputtered or printed Copper, Gold and Silver structures. For proper comparison the preparation of many devices (>50) and statistical analysis was found to be essential to overcome the finite sample to sample variation typically observed in organic field effect transistors (OFETs). To avoid dominating influences of adsorbates on the work functions of the different metals, ozone cleaning has been optionally applied before spin-coating the P3HT layer. The identified contact resistances were further investigated by potential mapping of the transistor channel enabled by additionally patterned sense fingers. This approach allows to determine the relative weight of source and drain contribution to the total contact resistance.