Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.74: Poster
Dienstag, 15. März 2011, 18:00–21:00, P3
Detailed analysis of hydrogen termination of MOVPE prepared Si(100) surfaces — Sebastian Brückner, Anja Dobrich, •Claas Löbbel, Peter Kleinschmidt, Henning Döscher, and Thomas Hannappel — Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Hydrogen is usually present as carrier gas and by-product from precursors during the preparation of Si(100) in the MOVPE environment. The step structure of the silicon surface might be strongly affected by hydrogen. For a detailed analysis of hydrogen at the Si(100) surface, we applied reflectance anisotropy spectroscopy (RAS) for in situ monitoring and used various surface sensitive UHV-based techniques accessed by a contamination free MOVPE to UHV transfer system.
At Si(100), RAS measures characteristic spectra for the clean and hydrogen terminated surface, which enabled us to study H adsorption and desorption during preparation. Fourier-transform infrared (FTIR) spectroscopy in an attenuated total reflection (ATR) configuration enabled surface sensitive measurements of the silicon hydrogen bonds. Tip induced H desorption by scanning tunneling microscopy (STM) evidenced the complete H termination of the surface.
Correlation between these results led to the conclusion that the surface is hydrogen free at high temperatures of T > 900∘C in H2 ambient and monohydride terminated after cool down in H2.