Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.76: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

Raman study of band-bending at ZnSe/GaAs(001) interfaces — Utz Bass, Alex Frey, Suddhasatta Mahapatra, Claus Schumacher, Karl Brunner, and •Jean Geurts — Universität Würzburg, Physikalisches Institut, Experimentelle Physik III, Am Hubland, 97074 Würzburg

At heterovalent interfaces thermodynamically induced intermixing of the constituent materials with different numbers of valence electrons usually causes large variations in band offsets and local doping density, depending on the spatial arrangement of atoms at the interface. We varied the interface stoichiometry of n-doped ZnSe / GaAs (001) heterostructures by the predeposition of different amounts of Zn or Se on n-GaAs prior to n-ZnSe layer growth by MBE. The induced changes in band bending were optically analysed by Raman spectroscopy from coupled Plasmon-LO-Phonon modes and by Far-Infrared reflectance spectroscopy for calibration. We detect a depletion layer of about 50 nm at the heterointerface, which partially shifts from the GaAs into the ZnSe with Se predeposition. Together with data from electrical transport across the interface and capacitance-voltage profiling, our results are explained consistently by a 550 mV potential barrier in the conduction band at a Zn-rich n-ZnSe / n-GaAs interface, which is tuned down to about 70 mV by increasing Se predeposition. In addition, PL signatures for excitation above and below the ZnSe band gap are presented.