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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.82: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Electrical and Optical Characterisation of ta-C/Silicon MASS Diodes — •Julian Alexander Amani, Marc Brötzmann, Ulrich Vetter, and Hans Hofsäss — Georg-August-Universität Göttingen, II. Physikalisches Institut, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

The metal - amorphous semiconductor - semiconductor (MASS) system metal/ta-C/silicon forms heterojunctions, which exhibit a pronounced rectifying behaviour, low saturation current and low parasitic currents. The conduction in this system is well described by a serial arrangement of an ideal Schottky diode and a Frenkel-Poole resistance which is dominant at forward bias [1,2].

In this work ta-C based MASS diodes were produced via mass separated ion beam deposition of carbon on p-type silicon substrates. To facilitate photoconductivity measurements of the heterostructures ITO was used as gate contact.

We present electrical characterizations of those structures with I-V and C-V measurements. Time and wavelength resolved photoconductivity measurements were performed in order to find the energetic distribution of defect states in the ta-C band gap.

[1] M. Brötzmann et al., JAP 106, 063704 (2009)

[2] M. Brötzmann et al., PSS C 7, 256 (2009)