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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.83: Poster
Tuesday, March 15, 2011, 18:00–21:00, P3
The study of Landé g-factor and effective mass of electrons in GaAs/AlGaAs quantum wells — •feng liu1, alexander schwan1, gregor bartsch1, dmitri yakovlev1, k biermann2, r hey2, p.v. antos2, and manfred bayer1 — 1Experimental Physics 2, TU Dortmund University, D-44221 Dortmund, Germany — 2Paul-Drude-Institute für Festkörperelektronik, 10117 Berlin, Germany
The Landé g-factor is a quantity which characterizes energy levels of electrons in magnetic field. The g-factor is important because the behavior of electron spins can be manipulated by controlling the electron g-factor. In our work, the influence of the spin-orbital splitting in the conduction band in GaAs quantum wells (QWs) on electron g-factor was studied. The g-factor of free electrons in GaAs/AlGaAs QWs with and without spin-orbit splitting in the conduction band was measured using time-resolved Kerr rotation technique and compared. It was found that the spin-orbit splitting of the conduction band only slightly influence the electron g-factor. Additionally, the effective mass of free electrons is also measured using optically detected cyclotron resonance technique and internal transitions of trions were observed.