Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.88: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

Spectroscopic ellipsometry for process control in PLD growth — •Jan Lorbeer, Tammo Böntgen, Jan Zippel, Rüdiger Schmidt-Grund, Michael Lorenz, and Marius Grundmann — Universtät Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5

We present detailed measurements of the surface condition of typical substrates and the dynamics of growth processes in heterostuctures. Process control is a vital part of modern thin film synthesis. We have used in situ spectroscopic ellipsomety (SE) to gain inside into the growth process of several oxidic compounds. Surface quality plays an important role for epitaxial growth as it determines the possible relations between the substrate and the epilayer. Thus in situ control of the surface condition is of importance. This is especially true when special growth conditions lead to surface reconstruction or the formation of oxide layers. We have investigated the surface of severals typical substrates (e.g. Si, GaAs, ZnO). Si and GaAs both exhibit the growth of an oxide layer when exposed to high oxygen partial pressure during heating. When heated under vacuum conditions on the other hand the a reduction of the Si oxide layer thickness was observed. ZnO is also prone to oxygen loss in low pressure conditions, leading to a reduction of the ZnO surface. We observed a change of the surface of single crystal ZnO substrates when heated in vacuum conditions. These results are compared to RHEED measurement of the same sample. This work was supported by Deutsche Forschungsgemeinschaft in the framework of Sonderforschungsbereich 762 "Functionality of Oxidic Interfaces".