Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.93: Poster

Tuesday, March 15, 2011, 18:00–21:00, P3

Plasma-oxidation of Ge(100)-surfaces characterized by MIES, UPS and XPS — •Lienhard Wegewitz¹, Sebastian Dahle¹, Oliver Höfft², Wolfgang Viöl³, Frank Endres², and Wolfgang Maus-Friedrichs¹ — ¹Institut für Energieforschung und Physikalische Technologien, Technische Universität Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld, Germany — ²Institut für Mechanische Verfahrenstechnik, Technische Universität Clausthal, Arnold-Sommerfeld-Str. 6, 38678 Clausthal-Zellerfeld, Germany — ³HAWK Göttingen, Fakultät Naturwissenschaften und Technik, Von-Ossietzky-Str. 99, 37085 Göttingen, Germany

Cleaning and passivation of Germanium surfaces is of tremendous technological interest. Germanium has various applications, for example in complementary metal-oxide-semiconductor elements. It turned out to be difficult to prepare contamination free Germanium surfaces by methods of wet chemistry. Several attempts have been made preparing such surfaces by different plasma treatments. We report cleaning and passivation of Ge(100)-surfaces by dielectric barrier discharge plasma at ambient temperature in oxygen and in air studied by Metastable Induced Electron Spectroscopy (MIES) and Photoelectron Spectroscopy (UPS(He I) and XPS). The plasma treatment is carried out in a special high-vacuum chamber which operates up to ambient pressure and is directly connected to the ultra-high vacuum chamber including the analysis equipment. In summary the air plasma treatment as well as the oxygen plasma treatment result in contamination free GeO₂ covered surfaces.