Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.96: Poster
Tuesday, March 15, 2011, 18:00–21:00, P3
Quantification of Impurities in Cu2O — •Hauke Metelmann1, Andreas Laufer1, Daniel Reppin1, Swen Graubner1, Angelika Polity1, Bruno K. Meyer1, Sebastian Geburt2, and Carsten Ronning2 — 1I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany — 2Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
Cuprous oxide (Cu2O) has suitable properties for thin film solar cell applications. One powerful method to investigate concentrations of impurities is secondary ion mass spectrometry (SIMS). This method stands out due the fact that the chemical identity can be directly determine without considerations of ionisation state or binding energy. The quantification of SIMS data requires the usage of so called relative sensitivity factors (RSFs) which are dependent on the analysed material. While some materials like Si, GaAs, InP or ZnO already have established RSF tables there has been no such reference for Cu2O yet. In the presented work the RSF table for Cu2O has been determined for sputtered Cu2O thin films by using implantation standards. The RSFs of the elements follow systematic trends according to their ionisation potential and their electron affinity so that the RSF value for unmeasured elements can be interpolated or extrapolated by a set of determined RSFs. Finally, these RSFs have been used to investigate impurities in various Cu2O layers.