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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.98: Poster
Dienstag, 15. März 2011, 18:00–21:00, P3
Electrical and structural properties of Zn-Co-O thin films — •Friedrich Schein, Holger Hochmuth, Holger von Wenckstern, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut fürExperimentelle Physik II, Linnéstr. 5, 04103 Leipzig
Considering that virtually all transparent oxide semiconductors (TOSs) are n-type it is of great interest to investigate p-type TOSs. A promising class of such materials are the zinc spinels ZnM2O4 (M = Co, Rh, Ir) [1]. They can be fabricated near and at room temperature; for ZnRh2O4 [2] and ZnCo2O4 [3] indications for stable p-type conductivity even in amorphous form were reported.
We present structural and electrical properties of zinc-cobalt-oxide thin films grown by pulsed laser deposition. The fabrication parameters like oxygen partial pressure and temperature are optimized in terms of electrical conductivity σ and surface quality. Zn-Co-O thin films deposited at low temperature (≈ 200∘ C) are polycrystalline and exhibit σ up to 18 S/cm whereas room temperature fabrication reveals X-ray-amorphous films having σ = 6 S/cm. Smooth surfaces with rms-roughness less than 0.5 nm have been measured with atomic force microscopy. The presentation includes a discussion of Hall effect measurements indicating p-type conductivity for certain growth conditions. Heterostructures using ZnO as n-type TOS are also shown.
[1] Dekkers et al., Appl. Phys. Lett. 90, 021903 (2007)
[2] Narushima et al., Adv. Mater. 15, 1409 (2003)
[3] Kim et al., J. Appl. Phys. 107, 103538 (2010)