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HL: Fachverband Halbleiterphysik

HL 45: Joint Poster Session

HL 45.2: Poster

Dienstag, 15. März 2011, 18:00–21:00, P1

Bias stress analysis of P3HT organic Field-effect transistors — •Hippolyte Hirwa and Veit Wagner — School of Engineering, Jacobs University Bremen, Campus Ring 1, D-28759 Bremen, Germany

Understanding and minimizing potentially existing bias stress behavior of organic field effect transistors (OFETs) is crucial for reliable operations of devices. Existing considerable bias stress, i.e. current change upon prolonged operation time, can render otherwise promising approaches useless for real applications. In this contribution we analyze the bias stress in poly (3-hexylthiophen) (P3HT) based field effect transistors. The drain current decay under bias stress can be seen as a change of the total resistance of the device with time. This resistance change is a combination of the contact resistance change and the channel resistance change. The channel resistance channel change is a result of the threshold voltage change and a change of the mobility value. The contact resistance change and the threshold voltage change interpreted as caused by the trapping of carriers into trap levels in both the contact and the channel regions. Encapsulated P3HT layers have been proven to be stable for short time bias stressing but on longer time scales and depending on the environment bias stress effects are evident.