Dresden 2011 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 45: Joint Poster Session
HL 45.7: Poster
Tuesday, March 15, 2011, 18:00–21:00, P1
Characterization Of Pentacene-Based Organic Field-Effect Transistors With SAM-Functionalized Gates — •Nis Hauke Hansen1, Sebastian Röding1, and Jens Pflaum1,2 — 1Inst. Exp. Phys. VI, Julius-Maximilians-University, 97074 Würzburg — 2ZAE Bayern, 97074 Würzburg
In order to design low-voltage organic thin film transistors, ultrathin self-assembled monolayer (SAM) gate dielectrics have been proven of promising technological potential [1]. Alkylphosphor-SAMs chemically bound on aluminumoxide allow for high capacitances in combination with superior insulation characteristics. In this contribution we discuss the influence of SAM gate dielectrics on the growth and the performance of pentacene (PEN) thin film transistors (TFTs). Current-voltage (IV) measurements of vacuum deposited PEN TFTs have been performed showing high mobilities and low operating voltages. The structural properties of the films are determined by x-ray diffraction (XRD) and atomic force microscopy (AFM). The SAM thickness and surface roughness have been analysed by x-ray reflectivity (XRR) and multidimensional modeling by the Parratt-algorithm. Combining this data we develop a correlation between the roughness of the substrate and the structural and electrical PEN properties. In addition, by temperature dependent measurements we determine the dominant transport mechanisms in PEN TFTs at different temperature ranges. Financial support by BMBF (project GREKOS) is gratefully acknowledged.
[1] H. Klauk, et al., Nature 445 (2007) 745