HL 47: GaN on Si
Wednesday, March 16, 2011, 10:15–11:30, POT 51
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10:15 |
HL 47.1 |
Kathodolumineszenzuntersuchungen an GaN auf Si(211)- und Si(311)-Substraten — •Mathias Müller, Anja Dempewolf, Frank Bertram, Thomas Hempel, Jürgen Christen, Roghaiyeh Ravash, Armin Dadgar und Alois Krost
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10:30 |
HL 47.2 |
Semi-polar GaN heteroepitaxy an high index Si-surfaces — •Roghaiyeh Ravash, Jürgen Bläsing, Thomas Hempel, Armin Dadgar, Jürgen Christen, and Alois Krost
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10:45 |
HL 47.3 |
Spatially resolved cathodoluminescence spectroscopy of InGaN/GaN heterostructures on m-plane GaN grown on patterned Si (112) substrates — •Christopher Karbaum, Frank Bertram, Sebastian Metzner, Jürgen Christen, Xianfeng Ni, Natalia Izyumskaya, Vitaliy Avrutin, Ümit Özgür, and Hadis Morkoç
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11:00 |
HL 47.4 |
Monitoring the influence of interlayer thickness and Si doping on the stress behaviour of GaN grown on Si(111) — •S. Fritze, J. Bläsing, P. Drechsel, A. Dadgar, and A. Krost
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11:15 |
HL 47.5 |
Investigations of pn-junctions based on AlGaN / AlN structures for LEDs on Si(111) — •Antje Rohrbeck, Hartmut Witte, Phannee Saengkaew, Thomas Fey, Armin Dadgar, Jürgen Christen, and Alois Krost
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