Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: ZnO: Devices
HL 48.2: Vortrag
Mittwoch, 16. März 2011, 10:30–10:45, POT 151
Dynamic Properties of (Mg,Zn)O-based MESFETs — •Fabian J. Klüpfel, Alexander Lajn, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Abteilung Halbleiterphysik, Linnéstr. 5, 04103 Leipzig
Transparent electronics is an emerging technological field, in which oxide based transistors play a key role. Various materials have been used to fabricate transparent transistors, including ZnO, (In,Ga,Zn)O, SnO2 and related compounds [1-4]. Besides the steady-state electrical characterization, dynamic properties of such devices have been studied using ring oscillators. However, this rather complex test structures are less suitable to investigate and identify the physical effects, which limit the working range in the frequency domain. We present dynamic measurements on single (Mg,Zn)O-based MESFETs with the gate materials AgxO, PtOy and Au. A strong dependence of the dynamic properties on the gate material was observed. The usage of AgxO results in delayed response of the source-drain current even for frequencies below 1 kHz. For PtOy and Au absence of such an effect was verified up to 1 Mhz. We attribute this difference to the diffusion of Ag into the channel material during device fabrication.
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[2] E. Fortunato, Thin Solid Films, 487, 205 (2005)
[3] Y. Ogo, Appl. Phys. Lett., 93, 032113 (2008)
[4] H. Frenzel et al., Adv. Mat., 10.1002/adma.201001375 (2010)