Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 48: ZnO: Devices

HL 48.7: Vortrag

Mittwoch, 16. März 2011, 12:00–12:15, POT 151

Light emitting diodes based on ZnO — •Julian Benz, Christian Reindl, Stefan Lautenschläger, Sebastian Eisermann, Torsten Henning, Peter J. Klar, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen

The oxide semiconductor zinc oxide (ZnO) is due to its wide band-gap potentially of interest for applications in blue and UV optoelectronic devices. The availability of crystalline ZnO substrates of different orientations offers new possibilities in this respect. However, before optoelectronic devices fully based on ZnO can be realized, one has to overcome the problem of p-type doping. A possible way to circumvent this problem is the use of p-GaN/n-ZnO heterostructures. In the last few years considerable progress has been made in the development of p-type ZnO. Doping with nitrogen is used in Giessen. We report on current-voltage characteristics and electroluminescence measurements of GaN/ZnO heterostructures and ZnO/ZnO:N homojunctions.