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HL: Fachverband Halbleiterphysik

HL 5: Innovative Systems and Devices

HL 5.1: Vortrag

Montag, 14. März 2011, 10:15–10:30, POT 06

Memristive switching in vanadium dioxide thin films — Danilo Bürger, Varun John, György Kovács, Ilona Skorupa, Manfred Helm, and •Heidemarie Schmidt — Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01314 Dresden

Memristive devices [1] exhibit an improved performance at ultra-small scales. The microscopic model for memristive behavior in oxide nanostructures often depends on the distribution of oxygen vacancies and is determined by the cation species. In 2008 HP presented the first bipolar TiO2-based memristor for resistive applications, where the drift of oxygen vacancies causes a change in the resistance of ultrathin TiO2 films [2] which can be locally modified by ion implantation [3]. We prepared vanadium dioxide (VO2) thin films with the reversible metal-insulator phase transition at the thermochromic switching temperature of around 340 K by pulsed laser deposition on (0001)-sapphire substrates and analyzed the electric-pulse-induced thermochromic switching in the VO2 gap region at room temperature due to local heating. As a result, we find the typical pinched hysteresis loop of a memristor, a repeatable switching behavior for billions of voltage pulses and switching times shorter than 50 ns in VO2 thin films.

[1] L. Chua, IEEE Transactions on Circuits Theory 18, 507 (1971). [2] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008). [3] S. Zhou, E. Čižmár, K. Potzger, M. Krause, G. Talut, M. Helm, J. Fassbender, S. A. Zvyagin, J. Wosnitza, and H. Schmidt, Phys. Rev. B 79, 113201 (2009)