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HL: Fachverband Halbleiterphysik
HL 5: Innovative Systems and Devices
HL 5.4: Talk
Monday, March 14, 2011, 11:00–11:15, POT 06
low-k dielectric and amorphous SiO2 - a comparative TEM/EELS analysis — •Pradeep Singh1, Sven Zimmerman2, Steffen Schulz1, Stefan Schulze2, and Michael Hietschold1 — 1Chemnitz University of Technology, Institute of Physics, Chemnitz, Germany — 2Fraunhofer ENAS, Department Back-End of Line, Chemnitz, Germany
The use of low dielectric constant materials (k<3) as a replacement of SiO2 (k=3.9) in the Back End of Line (BEOL) reduces interconnect delay, power dissipation and crosstalk noise. Current low-k dielectrics (SiCOH) prepared by the doping of methyl group in the SiO2 networks; have been studied very little from the structural point of view. In this study, we choose porous SiCOH as a low k dielectric material with dielectric constant k = 2.4 to investigate its structural, optical and electronic properties. The radial distribution function (rdf) derived from the Selected Area Electron Diffraction (SAED) allows to identify the atomic arrangement in the matrix. This gives the opportunity to investigate the structural difference between amorphous SiO2 and low-k dielectrics. Careful investigation of electron energy-loss spectroscopy (EELS) combined with TEM, provides information about the elemental composition, chemical bonding, band structure, dielectric functions, valence, and conduction electron densities. The rdf curve of porous SiCOH indicates a significant difference in density and structural arrangement as compared to amorphous SiO2.