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HL: Fachverband Halbleiterphysik

HL 52: Nonpolar and Semipolar Nitrides

HL 52.1: Vortrag

Mittwoch, 16. März 2011, 11:45–12:00, POT 51

Influence of Si-doping on heteroepitaxially grown a-plane GaN — •Matthias Wieneke, Barbara Bastek, Martin Noltemeyer, Thomas Hempel, Antje Rohrbeck, Harmut Witte, Peter Veit, Jürgen Bläsing, Armin Dadgar, Jürgen Christen, and Alois Krost — Otto-von-Guericke-Universität Magdeburg, FNW/IEP, Universitätsplatz 2, 39106 Magdeburg

Si-doped a-plane GaN samples with nominal doping levels up to 10²⁰ cm⁻³ were grown on r-plane sapphire by metal organic vapor phase epitaxy. Silane flow rates higher than 59 nmol/min lead to three dimensional grown crystallites as revealed by scanning electron microscopy. High resolution X-ray diffraction, photoluminescence and cathodoluminescence suggest considerably reduced defect densities in the large micrometer-sized GaN crystallites. Especially, transmission electron microscopy images verify a very low density of basal plane stacking faults less than 10⁴ cm⁻¹ [1] in these crystallites consisting of heteroepitaxially grown a-plane GaN. In our presentation the influence of the Si doping on the basal plane stacking faults will be discussed. [1] Wieneke et al., Phys. Status Solidi B, 2010, 10.1002/pssb.201046372