 |
11:45 |
HL 52.1 |
Influence of Si-doping on heteroepitaxially grown a-plane GaN — •Matthias Wieneke, Barbara Bastek, Martin Noltemeyer, Thomas Hempel, Antje Rohrbeck, Harmut Witte, Peter Veit, Jürgen Bläsing, Armin Dadgar, Jürgen Christen, and Alois Krost
|
|
|
|
12:00 |
HL 52.2 |
Single phase semipolar (1122) GaN on (1010) sapphire — •S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Wernicke, T. Niermann, M. Pristovsek, M. Lehmann, and M. Kneissl
|
|
|
|
12:15 |
HL 52.3 |
Polarisation of the spontaneous emission from nonpolar and semipolar InGaN quantum wells — •Lukas Schade, Ulrich Schwarz, Simon Ploch, Tim Wernicke, Arne Knauer, Veit Hoffmann, Markus Weyers, and Michael Kneissl
|
|
|
|
12:30 |
HL 52.4 |
Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer — •Martin Thunert, Matthias Wieneke, Anja Dempewolf, Frank Bertram, Armin Dadgar, Alois Krost, and Jürgen Christen
|
|
|
|
12:45 |
HL 52.5 |
Highly spatially and spectrally resolved cathodoluminescence microscopy of planar semipolar InGaN/GaN MQWs grown on pre-patterned sapphire substrate — •Silvio Neugebauer, Sebastian Metzner, Frank Bertram, Thomas Hempel, Jürgen Christen, Stephan Schwaiger, and Ferdinand Scholz
|
|
|
|
13:00 |
HL 52.6 |
Indium incorporation in GaInN quantum wells on various surface orientations — •Holger Jönen, Uwe Rossow, Heiko Bremers, Stephan Schwaiger, Ferdinand Scholz, Sebastian Metzner, Frank Bertram, Jürgen Christen, and Andreas Hangleiter
|
|
|
