Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 54: Joint Session: Organic Semiconductors IV: Excitations and Charges

HL 54.10: Talk

Wednesday, March 16, 2011, 16:45–17:00, ZEU 222

Photoinduced magnetoresistance in organic field-effect transistors — •Thomas Reichert and Tobat P. I. Saragi — Department of Mathematics and Science and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Strasse 40, D 34132 Kassel, Germany

We report on negative magnetoresistance (MR) in low external magnetic fields in organic field-effect transistors. This effect can only be observed if the device is irradiated. MR strongly depends on gate voltage but is independent of drain voltage. Furthermore, the MR increases as the intensity of irradiation increases and the relationship of both parameters is not linear. The dependency of MR on magnetic field is not linear either, but it follows Non-Lorentian function. The triplet exciton-charge reaction model is a possible explanation for negative MR in irradiated organic field-effect transistors.