Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 55: Photovoltaics: mainly Technology and Photon Management
HL 55.5: Vortrag
Mittwoch, 16. März 2011, 15:30–15:45, FOE Anorg
Conformal Al doped ZnO on rough silicon surfaces — •Martin Otto1, Matthias Kroll2, Thomas Käsebier2, Roland Salzer3, Paul T. Miclea1, and Ralf B. Wehrspohn1,3 — 1Martin-Luther-University Halle-Wittenberg, µMD Group - Institute of Physics, Heinrich Damerow Str. 4, 06120 Halle, Germany — 2Friedrich-Schiller-University Jena, Institute for Applied Physics, Max-Wien-Platz 1, 07743 Jena, Germany — 3Fraunhofer Institute for Mechanics of Materials Halle IWM, Walter-Hülse-Str.1, 06120 Halle, Germany
The feasibility of perfectly conformal deposition of transparent but highly conductive ZnO thin films on rough silicon surfaces for photovoltaic applications has been investigated. Aluminum doped zinc oxide (AZO) deposited via thermal ALD was used as a conformal cover layer for plasma etched black silicon. The coated structures achieve reflectances as low as 2.5% throughout the whole visible spectrum whereas the films exhibit resistivities of only 1.1·10−3 Ωcm. An absorption enhancement of nearly a factor of 10 at a wavelength of 1150 nm compared to a simulated perfect ARC was observed.