Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 55: Photovoltaics: mainly Technology and Photon Management
HL 55.8: Talk
Wednesday, March 16, 2011, 16:30–16:45, FOE Anorg
Nanowire based heterojunction Semiconductor-Insulator-Semiconductor solar cells — •Björn Hoffmann1, Vladimir Sivakov1, Florian Talkenberg1, Gerald Brönstrup1, and Silke Christiansen1,2 — 1Institut für Photonische Technologien, Jena — 2Max-Planck-Institut für die Physik des Lichts, Erlangen
Semiconductor-Insulator-Semiconductor (SIS) solar cells based on wet-chemically etched silicon nanowires are promising candidates for 3rd generation photovoltaics due to very good electro-optical properties and low production costs. Atomic layer deposition (ALD) is used to form a homogeneous layer of Al2O3 as a tunnel barrier around the nanowires followed by a thick layer of Al doped ZnO as transparent front contact. Electron beam induced current (EBIC) is used to visualize the areas of effective charge carrier separation which happens in the bulk wafer as well as in the nanowires. The cells reach short-circuit current densities of JSC=33 mA/cm2, open-circuit voltage of VOC=470 mV and power conversion efficiencies of up to η = 8,6%.