Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 60: Quantum Dots: Transport

HL 60.1: Vortrag

Mittwoch, 16. März 2011, 15:00–15:15, POT 251

Light sensing and room temperature memory application of a single-electron memory with positioned InAs quantum dots — •Sebastian Göpfert¹, Lukas Worschech¹, Stephan Lingemann¹, Christian Schneider¹, David Press², Sven Höfling¹, and Alfred Forchel¹ — ¹Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074Würzburg, Germany — ²Stanford University, Edward L Ginzton Lab, Stanford, CA 94305 USA

Electron-beam lithography and try etching techniques were applied for the fabrication of single-electron memories. The device is based on two site-controlled InAs quantum dots (QDs) embedded in a GaAs/AlGaAs quantum-wire transistor. A pattern of nanoholes on a modulation doped GaAs/AlGaAs heterostructure was used to serve as nucleation centers for the QDs. Large shifts of the transistor threshold occur by charging of the QDs with single electrons. At low bias voltages transport spectroscopy shows clear regimes of single-electron transport. Single-electron read and write functionalities up to room temperature were observed. Light with a wavelength in the telecommunication range can be used to control the memory function and to observe single electron charging events at room temperature.

S. Göpfert, L. Worschech, S. Lingemann, C. Schneider, D. Press, S. Höfling, and A. Forchel, Appl. Phys. Lett. accepted (2010)