Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 60: Quantum Dots: Transport

HL 60.3: Talk

Wednesday, March 16, 2011, 15:30–15:45, POT 251

Quantum dot memories based on antimony — •Tobias Nowozin, Annika Högner, Andreas Marent, Andrei Schliwa, and Dieter Bimberg — Institut für Festkörperphysik, Fakultät II, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin

A promising option to enhance the performance of today’s Flash memories is to use quantum dots (QDs) as a storage unit for charge carriers. In contrast to the Si/SiO₂-based Flash, QDs based on III-V semiconductors could facilitate long storage times in combination with fast write speeds (<nanoseconds). Especially type-II QDs based on GaSb with their exclusive hole localization in combination with other materials such as GaP are promising for non-volatile performance (i.e. >10 years storage time at room temperature). We present results of 8-band-k·p calculations for GaSb QDs and investigate the dependence of the localization energy on the size, shape, and composition of the dots. Storage times in various Sb-based QD heterostructures are predicted.