Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 60: Quantum Dots: Transport

HL 60.4: Vortrag

Mittwoch, 16. März 2011, 15:45–16:00, POT 251

Tunable g-factors in SiGe quantum dots — •Georgios Katsaros^1,2, Natalia Ares¹, Panayotis Spathis¹, Mathieu Stoffel², Frank Fournel³, Massimo Mongillo¹, Vincent Bouchiat⁴, Francois Lefloch¹, Armando Rastelli², Oliver G. Schmidt², and Silvano De Franceschi¹ — ¹CEA, INAC/SPSMS/LaTEQS, 17 Rue des Martyrs, 38054 Grenoble, France — ²IFW-Dresden, Institute for Integrative Nanosciences, Helmholtzstrasse 20, 01069 Dresden, Germany — ³CEA, LETI, MINATEC, F38054 Grenoble, France — ⁴Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble cedex 9, France

A prominent branch of spintronics aims at exploiting the electronic spin degree of freedom either for encoding and manipulating quantum information or for switching the state of transistors in a more efficient way. While ground-breaking achievements could be made mainly on GaAs-based heterostructures, the importance of exploring alternative material systems with favourable properties such as long spin coherence is now widely recognized. Si and Ge are attractive materials because in these materials electronic spins can have a long coherence time due to the absence of hyperfine interaction (in isotopically purified crystals). Here we report for the first time the realisation of single-hole transistors based on individual self-assembled SiGe quantum dots [1]. Transport spectroscopy reveals largely anisotropic and electrically tunable hole g-factors, which make SiGe self-assembled QDs an interesting material system for performing all-electrical spin coherent manipulations. Ref. : [1] G. Katsaros et al., Nature Nanotechnology , 2010, 5, 458.