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HL: Fachverband Halbleiterphysik
HL 63: II-VI-Compounds
HL 63.10: Vortrag
Mittwoch, 16. März 2011, 18:15–18:30, POT 151
Investigation on multibarrier Schottky contacts — •Stefan Müller1, Holger von Wenckstern1, Otwin Breitenstein2, Jörg Lenzner1, and Marius Grundmann1 — 1Universität Leipzig, Semiconductor Physics Group, Institut für Experimentelle Physik II, Leipzig, Germany — 2Max-Planck-Institut für Mikrostrukturphysik Weinberg 2, D-06120 Halle, Germany
We present current-voltage(I-V)-characteristics of multi-barrier PdOy/ZnO-Schottky contacts fabricated by reactive dc-sputtering. The ZnO nominally undoped thin films were grown by pulsed-laser deposition on a ZnO:Al buffer on a-Al2O3[1].
The I-V-characteristics were fitted by assuming a parallel connection of two or three individual diodes with different barrier heights(e.g. φB1 = 0.872 eV, φB2 = 0.66 eV, φB3 = 0.547 eV at room temperature), ideality factors (n1 = 2.1, n2 = 2.4, n3 = 1.8) and areas(A0, 0.03 A0, 4· 10−4 A0)[2]. Using dark lock-in thermography low-barrier patches were visualized for small forward currents.
These regions were investigated with additional techniques, like electron beam induced current and scanning electron microscope revealing origins for the local decrease of barrier height.
[1] H. von Wenckstern, Appl. Phys. Lett. 88, 092102 (2006)
[2] D. Defives, IEEE Trans. Electron Devices 46, 449 (1999)