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HL: Fachverband Halbleiterphysik

HL 64: Quantum Wires: Transport

HL 64.4: Vortrag

Mittwoch, 16. März 2011, 17:15–17:30, POT 251

Single ion implantation in semiconductor nanowires — •Raphael Niepelt, Andreas Johannes, Martin Gnauck, Irma Slowik, Sebastian Geburt und Carsten Ronning — Institut für Festkörperphysik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena

Ion implantation is well established as a standard doping technique for semiconductor nanowires. The concentration of dopant atoms per area is typically determined by total beam current monitoring during the irradiation. However, at extremely low ion fluencies, it is not possible to distinguish the exact number of implanted ions in a nanometer sized structure, as the ions are distributed statistically over the irradiated area that is usually far wider than the nanostructure of interest. In our experiments we implanted electrically contacted semiconductor nanostructures that were connected to a preamplifier/amplifier setup. As with every impinging ion a certain amount of energy is deposited inside the material, one can detect signals directly induced by the ion implantation and the nanostructures themselves can act as a radiation sensor. This leads to a countable and very precisely adjustable ion dose during the implantation down to doping with single ions.