Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 64: Quantum Wires: Transport
HL 64.8: Vortrag
Mittwoch, 16. März 2011, 18:30–18:45, POT 251
Electronic transport in tapered triangular-shaped InN nanowires — •Christian Blömers1, Jia Grace Lu2, Christopher Witte2, Hans Lüth1, Detlev Grützmacher1, and Thomas Schäpers1 — 1Institute of Bio- and Nanosystems (IBN-1) and JARA - Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany — 2Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484, USA
Among the group-III nitrides InN exhibits the lowest effective mass and the highest predicted electron mobility and peak drift velocity. Recently intense research has been carried out to elucidate the usability of InN nanowires for several applications, e.g. high density and low power consuming FET devices, high efficiency solar cells or high sensitivity detectors. We report on electrical measurements on triangular-shaped InN nanowires grown by chemical vapor deposition. The wires are tapered with triangle side lengths ranging from 300 nm down to 40 nm. We obtain an unexpected increase in resistivity with decreasing cross section area for wire segments with a side length smaller than lt = 80 nm. Additionally, we analyzed the temperature dependence of the resistivity and found a transition from metal-like to semiconductor-like behavior at the same transition side length lt = 80 nm. We explain our observations in terms of quantum confinement and donor deactivation.