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HL: Fachverband Halbleiterphysik

HL 64: Quantum Wires: Transport

HL 64.9: Vortrag

Mittwoch, 16. März 2011, 18:45–19:00, POT 251

Formation of p-Si/ZnO nanowire heterostrcutures for light emitting devices — •Yaser Haj Hmeidi, Rapheal Niepelt, Martin Gnauck, Frank Schmidl, and Carsten Ronning — Institut für Festkörperphysik, Universität Jena, Max-Wien-Platz 1, 07743 Jena

The development of scalable techniques for assembling nanowire devices needs practical circuits, which are highly parallel and reproducible overlarge areas. ZnO nanowires can be grown easily via vapor-liquid-solid (VLS) mechanism and are suitable for this application. Furthermore, they have an emission wavelength in the UV, but p-type doping is not possible so far. Therefore, light emitting devices must be based on heterostructures with other suitable p-type materials. In this presentation, we will demonstrate p-n heterojunctions between n-type ZnO nanowires and highly doped p-type Si substrates. We developed a simple and powerful approach on the basis of spin-on-glass SiO₂ [1]. This approach is intrinsically scalable since every step involved can be carried out in parallel over an entire wafer. The challenge in this particular geometry is the fabrication of top metallic contacts on top of the nanowires in a way that the contact dose not short with the substrate. The resulting devices exhibit rectifying properties and under certain conditions, also light emission.