Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 65: Nitrides: AlGaN
HL 65.4: Talk
Wednesday, March 16, 2011, 17:45–18:00, POT 51
Factors affecting the excitation process of Europium(Eu+3) ion in Europium-implanted AlGaN — •Jayanta Kumar Mishra1, Torsten Langer1, Uwe Rossow1, Kirill Trunov2, Andreas Wieck2, and Andreas Hangleiter1 — 1Institut für Angewandte Physik, TU Braunschweig — 2Angewandte Festkörperphysik,Ruhr-Universität Bochum, Germany
Rare earth ions implanted into GaN are promising for optoelectronic applications. They show luminescence in the visible range while the luminescence from this material system is sharper as well as independent of temperature due to intra 4f transition of rare earth ions. To improve the emission efficiency we implanted Europium in GaN codoped with Mg at dose range from 109cm−2 to 1014cm−2 with an energy of 100keV. The red emission from 5D0→7F2 of europium was remarkably enhanced by Mg codoping. When we tried Eu implanted AlGaN, Eu3+ shows more promising luminescence. The transition probability or the energy transfer efficiency enhances the Eu3+ luminescence in AlGaN. We show that Eu occupies a C3v symmetry site in AlGaN but in case of Mg doped GaN, Eu occupies a different site. The energy transfer from the host to Eu ions depends on the position of Eu ions in the host lattice. We also investigated the role of carriers (electrons/holes) in the excitation process of Eu ion by doping AlGaN with different kind of carriers (p-type and n-type).