HL 65: Nitrides: AlGaN
Wednesday, March 16, 2011, 17:00–18:00, POT 51
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17:00 |
HL 65.1 |
Si Doping Studies in AlGaN — •Kamran Forghani, Mohammadreza Gharavipour, Ferdinand Scholz, Benjamin Neuschl, Tobias Meisch, Ingo Tischer, Klaus Thonke, Oliver Klein, and Ute Kaiser
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17:15 |
HL 65.2 |
Growth and characterization of highly reflective AlInN/AlGaN Bragg reflectors — •Christoph Berger, Jürgen Bläsing, Armin Dadgar, Thomas Hempel, Jürgen Christen, and Alois Krost
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17:30 |
HL 65.3 |
Ultraviolet photoluminescence excitation spectroscopy of AlGaN and AlN — •Martin Feneberg, Benjamin Neuschl, Tobias Meisch, Klaus Thonke, Robert Metzner, Bernd Garke, and Rüdiger Goldhahn
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17:45 |
HL 65.4 |
Factors affecting the excitation process of Europium(Eu+3) ion in Europium-implanted AlGaN — •Jayanta Kumar Mishra, Torsten Langer, Uwe Rossow, Kirill Trunov, Andreas Wieck, and Andreas Hangleiter
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