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HL: Fachverband Halbleiterphysik

HL 68: Photovoltaics: Chalcopyrites II

HL 68.8: Vortrag

Donnerstag, 17. März 2011, 12:15–12:30, FOE Anorg

Band alignment of epitaxial ZnS on CuInS₂(001) and CuInS₂(112) — •Carsten Lehmann, Frank Kelleter, and Christian Pettenkofer — Helmholtz-Zentrum Berlin, Berlin, Deutschland

With respect to thin film solar cells based on CuInS₂ and ZnO ZnS is a promising alternative to CdS as buffer layer material [1,2]. We report on the band aligment of epitaxial ZnS prepared by molecular beam epitaxy (MBE) on CuInS₂ (001) and CuInS₂(112). The preparation and investigation of the samples were performed in an ultra high vacuum system at the Helmholtz-Zentrum Berlin. An alternating step-by-step growth and investigation by photoelectron spectroscopy (PES) and low energy electron diffraction (LEED) provided insight on the band line up of the CuInS₂-ZnS interface. The CuInS₂ substrates were prepared on GaAs by gas source molecular beam epitaxy (GSMBE) using di-tert butyl disulfide (TBDS) as sulfur precursor. Furthermore, the derived data were used to determine the band alignment of the corresponding CuInS₂-ZnS-ZnO interfaces prepared by metal organic molecular beam epitaxy (MOMBE) based on diethylzinc and water [2]. [1] M. Bär, et. al., Journal of Applied Physics 99 (2006) [2] S. Andres, et. al., Thin Solid Films 518 (2009)