HL 69: Nitrides: LEDs
Donnerstag, 17. März 2011, 10:15–11:30, POT 51
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10:15 |
HL 69.1 |
Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes — •Tim Kolbe, Arne Knauer, Joachim Stellmach, Chris Chua, Zhihong Yang, Sven Einfeldt, Patrick Vogt, Noble M. Johnson, Markus Weyers, and Michael Kneissl
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10:30 |
HL 69.2 |
Processing of III-nitride thin film light emitting diodes via wafer bonding and laser lift-off — •Christian Goßler, Rüdiger Moser, Michael Kunzer, Klaus Köhler, and Ulrich Schwarz
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10:45 |
HL 69.3 |
Micromachining with picosecond laser pulses: A versatile tool for the fabrication of optoelectronic devices — •Rüdiger Moser, Michael Kunzer, Christian Goßler, Klaus Köhler, Ulrich Schwarz, and Joachim Wagner
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11:00 |
HL 69.4 |
High n-type crack-free GaN layers on Si substrates by Ge doping — •Armin Dadgar, Jürgen Bläsing, Annette Diez, and Alois Krost
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11:15 |
HL 69.5 |
All-optical determination of absolute quantum efficiency values of GaInN-based light-emitters — •Bastian Galler, Matthias Sabathil, Ansgar Laubsch, Tobias Meyer, Lutz Höppel, Gertrud Kräuter, Hans-Jürgen Lugauer, Asako Hirai, Martin Straßburg, Matthias Peter, Andreas Biebersdorf, Ulrich Steegmüller, and Berthold Hahn
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