Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 71: Quantum Dots: Optical Properties
HL 71.9: Vortrag
Donnerstag, 17. März 2011, 12:30–12:45, POT 251
Subnanosecond electrical charge control in a single InGaAs quantum dot — •Jörg Nannen1, Wolf Quitsch1, Sven Eliasson1, Tilmar Kümmell1, Karl Brunner2, and Gerd Bacher1 — 1Werkstoffe der Elektrotechnik & CeNIDE, Universität Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg — 2Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg
Single quantum dots (SQD's) are highly interesting candidates for future memory devices, which utilize single electrons or single holes as information carriers. The possibility to electrically and optically address SQD's in charge-tunable semiconductor heterostructures has led to different new concepts to inject, store and read-out the information of a single carrier in a SQD.
We use a high frequency adapted charge-tunable device in order to get electrical access to self-assembled single InGaAs quantum dots in the GHz regime [1]. Under high reverse bias we are able to optically prepare a single hole in the SQD. By the application of a subsequent high frequency voltage pulse, controlled electron tunneling into the SQD is achieved. We demonstrate that depending on the applied voltage either one or two electrons can tunnel into the SQD. It is shown that the electrons can be transported into and out of the quantum dot on time scales down to 300 ps.
[1] Nannen et al., Appl. Phys. Lett. 97, 173108 (2010)