Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 76: Nitride-based Green Lasers

HL 76.1: Talk

Thursday, March 17, 2011, 11:45–12:00, POT 51

Dynamics of (Al,In)GaN-based laser diodes — •Christian Hornuß, Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, and Joachim Wagner — Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, D-79108 Freiburg

Understanding the dynamics of (Al,In)GaN-based laser diodes is essential for realizing ultra-short pulse lasers for biomedical imaging. We investigate the dynamic behavior of violet laser diodes above and below laser threshold. Relaxation dynamics above threshold are analyzed with high temporal and spectral resolution, as well as electroluminescence decay below threshold to determine the charge carrier lifetime. The experimental results are compared with rate equation simulations.By comparison of experimental and theoretical data we derive the carrier lifetime at threshold and the differential gain.