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Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 76: Nitride-based Green Lasers

HL 76.5: Vortrag

Donnerstag, 17. März 2011, 12:45–13:00, POT 51

Growth of AlGaN stripes with semipolar side facets as waveguide claddings for semipolar laser structures — •Robert Anton Richard Leute1, Kamran Forghani1, Frank Lipski1, Ferdinand Scholz1, Ingo Tischer2, Benjamin Neuschl2, and Klaus Thonke21Institut für Optoelektronik, Universität Ulm — 2Institut für Quantenmaterie / Gruppe Halbleiterphysik, Universität Ulm

Selective area growth of group III nitrides allows the epitaxy of semipolar facets with reduced piezoelectric field on 2-inch sapphire substrates. Additionally, the 3D growth of stripes, pyramids or the like enables us to manipulate the extraction and propagation of light by changing the surface topology. LEDs grown on GaN stripes with {1122} facets and GaN stripes with {1011} facets have been published. The fabrication of laser structures with resonators along the stripes depends critically on the controlled growth of a waveguide cladding for optical confinement, typically realized by AlGaN layers. However, the growth parameters of AlGaN are challenging for selective epitaxy. The high growth temperature promotes lateral growth, leading to the emergence of an undesirable c-plane facet, whereas the reduced selectivity of the mask material for Al atoms leads to polycrystalline growth on masked areas. We investigate the selective growth of AlGaN with Al contents up to 10% with structured SiO2 and SiNx masks. The influence of mask geometries (stripes ∥ m and ⊥ m, variable opening sizes and periods) on topology, material quality and Al incorporation is examined. Therefore, we present SEM investigations, spatially resolved cathodoluminescence as well as low temperature photoluminescence.

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