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HL: Fachverband Halbleiterphysik
HL 76: Nitride-based Green Lasers
HL 76.6: Talk
Thursday, March 17, 2011, 13:00–13:15, POT 51
Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity — •Heiko Dartsch1, Christian Tessarek1, Stephan Figge1, Timo Aschenbrenner1, Carsten Kruse1, Marco Schowalter2, Andreas Rosenauer2, and Detlef Hommel1 — 1University of Bremen, Institute of Solid State Physics - Semiconductor Epitaxy — 2University of Bremen, Institute of Solid State Physics - Electron Microscopy
InGaN quantum dots (QDs) and their implementation into the micro cavity of a vertical distributed Bragg reflector (DBR) resonator are the key elements to achieve single photon emission required for quantum cryptography. However, the epitaxial overgrowth of InGaN QDs is challenging because they are easily destroyed by elevated temperatures. For this reason a common approach is the fabrication of a hybride cavity structure by non epitaxial deposition of a dielectric top DBR.
We will present the first successful implementation of electrically driven InGaN QDs into a monolithic GaN/AlInN cavity structure fully epitaxial grown by metal organic vapor phase epitaxy. Therefore a single layer of InGaN QDs has been embedded in a n- and p-type doped 5λ GaN cavity surrounded by a 40 fold bottom- and a 10 fold GaN/AlInN top-DBR. Electroluminescence of the InGaN QDs was achived by the application of intra cavity contacts. Optical and structural properties of the device will be discussed.