HL 76: Nitride-based Green Lasers
Donnerstag, 17. März 2011, 11:45–13:15, POT 51
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11:45 |
HL 76.1 |
Dynamics of (Al,In)GaN-based laser diodes — •Christian Hornuß, Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, and Joachim Wagner
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12:00 |
HL 76.2 |
The loss mechanisms in green-emitting laser diodes — •Andreas Kruse, Moritz Brendel, Uwe Rossow, Hyonju Chauveau, Jean-Yves Duboz, and Andreas Hangleiter
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12:15 |
HL 76.3 |
Growth and characterization of AlInN for cladding layers in long wavelength GaN based laser structures — •Ernst Ronald Buß, Heiko Bremers, Uwe Rossow, Egidijus Sakalauskas, Rüdiger Goldhahn, and Andreas Hangleiter
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12:30 |
HL 76.4 |
Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures — •Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, Johannes Thalmair, Josef Zweck, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter
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12:45 |
HL 76.5 |
Growth of AlGaN stripes with semipolar side facets as waveguide claddings for semipolar laser structures — •Robert Anton Richard Leute, Kamran Forghani, Frank Lipski, Ferdinand Scholz, Ingo Tischer, Benjamin Neuschl, and Klaus Thonke
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13:00 |
HL 76.6 |
Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity — •Heiko Dartsch, Christian Tessarek, Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel
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